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| AP630GP Pb Free Plating Product Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 200V 400m 9A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP630GP) is available for low-profile applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 200 30 9 5.7 36 74 0.59 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 240 9 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit /W /W Data & specifications subject to change without notice 200219032 AP630GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 200 2 - Typ. 0.248 40 25 3.6 14 8 26 34 22 515 90 40 Max. Units 400 4 10 100 100 V V/ m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= 30V ID= 9A VDS=160V VGS=10V VDD=100V ID= 9A RG=10,VGS=10V RD=11 VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 9 36 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=9A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25 , IAS=9A. 3.Pulse width <300us , duty cycle <2%. AP630GP 10 14 T C =25 o C V G =10V V G =8.0V V G =7.0V ID , Drain Current (A) 8 T C =150 o C V G =10V V G =8.0V V G =7.0V V G =6.0V 12 ID , Drain Current (A) 10 6 8 V G =6.0V 6 4 V G =5.0V 4 V G =5.0V 2 2 V G =4.0V V G =4.0V 0 0 2 4 6 8 10 12 14 0 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =5A 2.5 1.1 V G =10V Normalized BVDSS (V) 1 Normalized R DS(ON) -50 0 50 100 150 2 1.5 1 0.9 0.5 0.8 0 -50 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature AP630GP 10 80 8 60 ID , Drain Current (A) 6 PD (W) 4 2 0 25 50 75 100 125 150 40 20 0 0 50 100 150 T c , Case Temperature ( C) o Tc , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 10us 10 Normalized Thermal Response (R thjc) DUTY=0.5 0.2 100us ID (A) 0.1 0.1 0.05 1ms 1 PDM 0.02 SINGLE PULSE 0.01 10ms 100ms T c =25 o C Single Pulse t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP630GP f=1.0MHz 16 10000 I D =9A 14 VGS , Gate to Source Voltage (V) V DS =80V 12 V DS =120V 10 Ciss V DS =160V C (pF) 100 8 Coss 6 4 Crss 2 0 0 5 10 15 20 25 30 35 1 1 11 21 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 4 10.00 T j =150 o C T j =25 o C 1.00 3.5 VGS(th) (V) IS (A) 3 0.10 2.5 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 2 -50 0 50 100 150 V SD (V) T j Junction Temperayure ( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP630GP RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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